Alliance Memory, Inc. Memory AS4C512M16D4-75BIN

Description
SDRAM - DDR4 Memory IC 8Gbit POD 1.333 GHz 18 ns 96-FBGA (7.5x13)
Datasheet
Description
SDRAM - DDR4 Memory IC 8Gbit POD 1.333 GHz 18 ns 96-FBGA (7.5x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C512M16D4-75BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 8Gbit POD 1.333 GHz 18 ns 96-FBGA (7.5x13)

SDRAM - DDR4 Memory IC 8Gbit POD 1.333 GHz 18 ns 96-FBGA (7.5x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C512M16D4-75BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C512M16D4-75BIN
Integrated Circuits (ICs) - Memory AS4C512M16D4-75BIN
8GB 512MX16 1.2V INDUSTRIAL (-40

8GB 512MX16 1.2V INDUSTRIAL (-40

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number AS4C512M16D4-75BIN AS4C512M16D4-75BIN
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 18 ns 18 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Density 8000000 kbits 8000000 kbits
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