Alliance Memory, Inc. Memory AS4C4M32MSA-6BINTR

Description
SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-FBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-FBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C4M32MSA-6BINTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-FBGA (8x13)

SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-FBGA (8x13)

Buy Now Datasheet
Memory - AS4C4M32MSA-6BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)

SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)

Buy Now Datasheet
IC DRAM 128MBIT PARALLEL 90FBGA

IC DRAM 128MBIT PARALLEL 90FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C4M32MSA-6BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C4M32MSA-6BINTR
Integrated Circuits (ICs) - Memory AS4C4M32MSA-6BINTR
IC DRAM 128MBIT PARALLEL 90FBGA

IC DRAM 128MBIT PARALLEL 90FBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C4M32MSA-6BINTR-ND AS4C4M32MSA-6BINTR AS4C4M32MSA-6BINTR AS4C4M32MSA-6BINTR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 90-VFBGA BGA; 90-VFBGA BGA
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