SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)
IC DRAM 128MBIT PARALLEL 90FBGA
IC DRAM 128MBIT PARALLEL 90FBGA
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C4M32MSA-6BIN | AS4C4M32MSA-6BIN | AS4C4M32MSA-6BIN |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.5 ns | 5.5 ns | 5.5 ns |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 128000 kbits | 128000 kbits | 128000 kbits |
