Alliance Memory, Inc. Memory AS4C4M32MSA-6BIN

Description
IC DRAM 128MBIT PARALLEL 90FBGA
Datasheet
Description
IC DRAM 128MBIT PARALLEL 90FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 128MBIT PARALLEL 90FBGA

IC DRAM 128MBIT PARALLEL 90FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C4M32MSA-6BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C4M32MSA-6BIN
Integrated Circuits (ICs) - Memory AS4C4M32MSA-6BIN
IC DRAM 128MBIT PARALLEL 90FBGA

IC DRAM 128MBIT PARALLEL 90FBGA

Supplier's Site
Memory - AS4C4M32MSA-6BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)

SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C4M32MSA-6BIN AS4C4M32MSA-6BIN AS4C4M32MSA-6BIN
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 5.5 ns 5.5 ns 5.5 ns
Density 128000 kbits 128000 kbits 128000 kbits
Data Rate 166 MHz
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