SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5.4ns 54-TFBGA (8x8)
IC DRAM 64MBIT PARALLEL 54TFBGA Product overview: AS4C4M16SA-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C4M16SA-6BIN can be used for catalog matching and distributor lookup.
Category: DRAM
Win Source Part Number: 1447380-AS4C4M16SA-6
Manufacturer: Alliance Memory, Inc.
IC DRAM 64MBIT PARALLEL 54TFBGA
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IC DRAM 64MBIT PARALLEL 54TFBGA
IC DRAM 64M PARALLEL 54TFBGA
SDRAM Memory IC 64Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Karl Kruse GmbH & Co. KG | Lingto Electronic Limited | Utmel Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1450-1257-ND | 774-AS4C4M16SA-6BIN | 1447380-AS4C4M16SA-6BIN | AS4C4M16SA-6BIN | AS4C4M16SA-6BIN | AS4C4M16SA-6BIN | 28-AS4C4M16SA-6BIN | AS4C4M16SA-6BIN |
| Product Name | Memory | Memory IC and Storage Component | DRAM | Integrated Circuits (ICs) - Memory | SDRAM,64M,3.3V,166MHz,4M x 16,54ball BGA | Memory | IC DRAM 64M PARALLEL 54TFBGA | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 64000 kbits | 64000 kbits | 64000 kbits | 67109 kbits | 64000 kbits | |||
| Package Type | 54-TFBGA | BGA; Tray | BGA | 54ball BGA | 54-TFBGA | BGA; 54-TFBGA | ||
| Supply Voltage | 3V ~ 3.6V | 3.6V; 3V ~ 3.6V | 3.6V; 3V ~ 3.6V | -3.3V; 3V; 3.3V | 3.6V; 3V ~ 3.6V |
