Alliance Memory, Inc. Memory AS4C32M16SB-7BCN

Description
IC DRAM 512MBIT PAR 54TSOP II
Datasheet
Description
IC DRAM 512MBIT PAR 54TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 512MBIT PAR 54TSOP II

IC DRAM 512MBIT PAR 54TSOP II

Supplier's Site Datasheet
Memory - AS4C32M16SB-7BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)

SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)

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Integrated Circuits (ICs) - Memory - Memory - AS4C32M16SB-7BCN - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C32M16SB-7BCN
Integrated Circuits (ICs) - Memory - Memory AS4C32M16SB-7BCN
IC DRAM 512MBIT PAR 54FBGA

IC DRAM 512MBIT PAR 54FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16SB-7BCN AS4C32M16SB-7BCN AS4C32M16SB-7BCN
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 6 ns 6 ns
Density 512000 kbits 512000 kbits 512000 kbits
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