Alliance Memory, Inc. Memory AS4C32M16SB-7BCN

Description
SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)
Datasheet
Description
SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C32M16SB-7BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)

SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)

Buy Now
IC DRAM 512MBIT PAR 54TSOP II

IC DRAM 512MBIT PAR 54TSOP II

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS4C32M16SB-7BCN - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C32M16SB-7BCN
Integrated Circuits (ICs) - Memory - Memory AS4C32M16SB-7BCN
IC DRAM 512MBIT PAR 54FBGA

IC DRAM 512MBIT PAR 54FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16SB-7BCN AS4C32M16SB-7BCN AS4C32M16SB-7BCN
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 6 ns 6 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - RAM - MT5C2568C-20/XT - 1231193-MT5C2568C-20/XT - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 256 kbits
View Details
2 suppliers
SDRAM - 2420777P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821404VXF - 5962R1821404VXF - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 4 k
View Details