Alliance Memory, Inc. Memory AS4C32M16SB-7BCN

Description
SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)
Datasheet
Description
SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C32M16SB-7BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)

SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)

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Integrated Circuits (ICs) - Memory - Memory - AS4C32M16SB-7BCN - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C32M16SB-7BCN
Integrated Circuits (ICs) - Memory - Memory AS4C32M16SB-7BCN
IC DRAM 512MBIT PAR 54FBGA

IC DRAM 512MBIT PAR 54FBGA

Supplier's Site
IC DRAM 512MBIT PAR 54TSOP II

IC DRAM 512MBIT PAR 54TSOP II

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16SB-7BCN AS4C32M16SB-7BCN AS4C32M16SB-7BCN
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 6 ns 6 ns
Operating Temperature 0 to 70 C (32 to 158 F)
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