SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 54-FBGA (8x8)
IC DRAM 512MBIT PARALLEL 54FBGA
IC DRAM 512MBIT PARALLEL 54FBGA
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AS4C32M16SA-7BIN | AS4C32M16SA-7BIN | AS4C32M16SA-7BIN |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
