Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C32M16SA-7BIN

Description
IC DRAM 512MBIT PARALLEL 54FBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 54FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AS4C32M16SA-7BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16SA-7BIN
Integrated Circuits (ICs) - Memory AS4C32M16SA-7BIN
IC DRAM 512MBIT PARALLEL 54FBGA

IC DRAM 512MBIT PARALLEL 54FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 54FBGA

IC DRAM 512MBIT PARALLEL 54FBGA

Supplier's Site Datasheet
Memory - AS4C32M16SA-7BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 54-FBGA (8x8)

SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 54-FBGA (8x8)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16SA-7BIN AS4C32M16SA-7BIN AS4C32M16SA-7BIN
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 143 MHz
Access Time 5.4 ns 5.4 ns 5.4 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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2 suppliers