Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C32M16SA-7BIN

Description
IC DRAM 512MBIT PARALLEL 54FBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 54FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AS4C32M16SA-7BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C32M16SA-7BIN
Integrated Circuits (ICs) - Memory AS4C32M16SA-7BIN
IC DRAM 512MBIT PARALLEL 54FBGA

IC DRAM 512MBIT PARALLEL 54FBGA

Supplier's Site
Memory - AS4C32M16SA-7BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 54-FBGA (8x8)

SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 54-FBGA (8x8)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 54FBGA

IC DRAM 512MBIT PARALLEL 54FBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C32M16SA-7BIN AS4C32M16SA-7BIN AS4C32M16SA-7BIN
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 143 MHz
Access Time 5.4 ns 5.4 ns 5.4 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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