Alliance Memory, Inc. Memory AS4C16M32MSB-6BINTR

Description
SDRAM Memory IC 512Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)
Datasheet
Description
SDRAM Memory IC 512Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)
Datasheet

Suppliers

Company
Product
Description
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Memory - AS4C16M32MSB-6BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)

SDRAM Memory IC 512Mbit Parallel 166 MHz 5.5 ns 90-FBGA (8x13)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C16M32MSB-6BINTR
Integrated Circuits (ICs) - Memory - Memory AS4C16M32MSB-6BINTR
MEMORY

MEMORY

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS4C16M32MSB-6BINTR AS4C16M32MSB-6BINTR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits
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