Alliance Memory, Inc. DRAM AS4C16M16D1-5BCN

Description
Category: DRAM Win Source Part Number: 1447531-AS4C16M16D1- 5BCN Manufacturer: Alliance Memory, Inc.
Request a Quote Datasheet
Description
Category: DRAM Win Source Part Number: 1447531-AS4C16M16D1- 5BCN Manufacturer: Alliance Memory, Inc.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DRAM - 1447531-AS4C16M16D1-5BCN - Win Source Electronics
Laguna Hills, CA, United States
Category: DRAM Win Source Part Number: 1447531-AS4C16M16D1- 5BCN Manufacturer: Alliance Memory, Inc.

Category: DRAM
Win Source Part Number: 1447531-AS4C16M16D1-5BCN
Manufacturer: Alliance Memory, Inc.

Buy Now
Memory IC and Storage Component - 774-AS4C16M16D1-5BCN - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-AS4C16M16D1-5BCN
Memory IC and Storage Component 774-AS4C16M16D1-5BCN
IC DRAM 256MBIT PAR 60TFBGA Product overview: AS4C16M16D1-5BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C16M16D1-5BCN can be used for catalog matching and distributor lookup.

IC DRAM 256MBIT PAR 60TFBGA Product overview: AS4C16M16D1-5BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C16M16D1-5BCN can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C16M16D1-5BCN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C16M16D1-5BCN
Integrated Circuits (ICs) - Memory AS4C16M16D1-5BCN
IC DRAM 256MBIT PARALLEL 60TFBGA

IC DRAM 256MBIT PARALLEL 60TFBGA

Supplier's Site
DDR SDRAM,256M,16M x 16,2.5V,60ball BGA - AS4C16M16D1-5BCN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
DDR SDRAM,256M,16M x 16,2.5V,60ball BGA
AS4C16M16D1-5BCN
DDR SDRAM,256M,16M x 16,2.5V,60ball BGA AS4C16M16D1-5BCN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
IC DRAM 256MBIT PARALLEL 60TFBGA

IC DRAM 256MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet
Memory - AS4C16M16D1-5BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 60-TFBGA (8x13)

SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 60-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Karl Kruse GmbH & Co. KG Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1447531-AS4C16M16D1-5BCN 774-AS4C16M16D1-5BCN AS4C16M16D1-5BCN AS4C16M16D1-5BCN AS4C16M16D1-5BCN AS4C16M16D1-5BCN
Product Name DRAM Memory IC and Storage Component Integrated Circuits (ICs) - Memory DDR SDRAM,256M,16M x 16,2.5V,60ball BGA Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns 0.7000 ns
Cycle Time 15 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Address Bus Width 16 bits
Unlock Full Specs
to access all available technical data

Similar Products

FIFOs Memory - SN74ACT7201LA15DV - Quarktwin Technology Ltd.
Specs
Data Rate 40 MHz
Access Time 15 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
 - 27S19ADM/B - Rochester Electronics
Specs
Memory Category PROM
Density 0 kbits
Package Type DIP; CDIP16
View Details
4 suppliers
Memory - 16-2948-02 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details