Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C128M8D1-6TINTR

Description
IC DRAM 1GBIT PARALLEL 66TSOP II
Datasheet
Description
IC DRAM 1GBIT PARALLEL 66TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AS4C128M8D1-6TINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C128M8D1-6TINTR
Integrated Circuits (ICs) - Memory AS4C128M8D1-6TINTR
IC DRAM 1GBIT PARALLEL 66TSOP II

IC DRAM 1GBIT PARALLEL 66TSOP II

Supplier's Site
Memory - AS4C128M8D1-6TINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 1Gbit Parallel 166 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 1Gbit Parallel 166 MHz 700 ps 66-TSOP II

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 66TSOP II

IC DRAM 1GBIT PARALLEL 66TSOP II

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C128M8D1-6TINTR AS4C128M8D1-6TINTR AS4C128M8D1-6TINTR
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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