Alliance Memory, Inc. Memory AS4C128M8D1-6TINTR

Description
SDRAM - DDR Memory IC 1Gbit Parallel 166 MHz 700 ps 66-TSOP II
Datasheet
Description
SDRAM - DDR Memory IC 1Gbit Parallel 166 MHz 700 ps 66-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C128M8D1-6TINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 1Gbit Parallel 166 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 1Gbit Parallel 166 MHz 700 ps 66-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C128M8D1-6TINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C128M8D1-6TINTR
Integrated Circuits (ICs) - Memory AS4C128M8D1-6TINTR
IC DRAM 1GBIT PARALLEL 66TSOP II

IC DRAM 1GBIT PARALLEL 66TSOP II

Supplier's Site
IC DRAM 1GBIT PARALLEL 66TSOP II

IC DRAM 1GBIT PARALLEL 66TSOP II

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C128M8D1-6TINTR AS4C128M8D1-6TINTR AS4C128M8D1-6TINTR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24LC16/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 16 kbits
View Details
Memory - 16-3745-01-T - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 1882600 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details