Alliance Memory, Inc. Memory AS4C128M16MD4-062BAN

Description
IC DRAM 2GBIT LVSTL 200FBGA
Datasheet
Description
IC DRAM 2GBIT LVSTL 200FBGA
Datasheet

Suppliers

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Product
Description
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IC DRAM 2GBIT LVSTL 200FBGA

IC DRAM 2GBIT LVSTL 200FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C128M16MD4-062BAN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C128M16MD4-062BAN
Integrated Circuits (ICs) - Memory AS4C128M16MD4-062BAN
IC DRAM 2GBIT LVSTL 200FBGA

IC DRAM 2GBIT LVSTL 200FBGA

Supplier's Site
Memory - AS4C128M16MD4-062BAN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL 1.6 GHz 3.5 ns 200-FBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL 1.6 GHz 3.5 ns 200-FBGA (10x14.5)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C128M16MD4-062BAN AS4C128M16MD4-062BAN AS4C128M16MD4-062BAN
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 3.5 ns 3.5 ns 3.5 ns
Density 2000000 kbits 2000000 kbits 2000000 kbits
Data Rate 1600 MHz
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