SDRAM - Mobile LPDDR4 Memory IC 2Gb (128M x 16) LVSTL 1.6GHz 3.5ns 200-FBGA (10x14.5)
IC DRAM 2GBIT LVSTL 200FBGA Product overview: AS4C128M16MD4-062BAN
SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL 1.6 GHz 3.5 ns 200-FBGA (10x14.5)
IC DRAM 2GBIT LVSTL 200FBGA
IC DRAM 2GBIT LVSTL 200FBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1450-AS4C128M16MD4-062BAN-ND | 774-AS4C128M16MD4-062BAN | AS4C128M16MD4-062BAN | AS4C128M16MD4-062BAN | AS4C128M16MD4-062BAN |
| Product Name | Memory | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |
| Package Type | 200-WFBGA | BGA; Tray | BGA; 200-WFBGA | BGA | |
| Supply Voltage | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 1.06V ~ 1.17V~ 1.7V ~ 1.95V | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 1.06V ~ 1.17V, 1.7V ~ 1.95V | |
| Access Time | 3.5 ns | 3.5 ns | 3.5 ns | 3.5 ns |
