Alliance Memory, Inc. Memory AS4C128M16MD4-062BAN

Description
IC DRAM 2GBIT LVSTL 200FBGA
Datasheet
Description
IC DRAM 2GBIT LVSTL 200FBGA
Datasheet

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Product
Description
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IC DRAM 2GBIT LVSTL 200FBGA

IC DRAM 2GBIT LVSTL 200FBGA

Supplier's Site Datasheet
Memory - AS4C128M16MD4-062BAN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL 1.6 GHz 3.5 ns 200-FBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL 1.6 GHz 3.5 ns 200-FBGA (10x14.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C128M16MD4-062BAN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C128M16MD4-062BAN
Integrated Circuits (ICs) - Memory AS4C128M16MD4-062BAN
IC DRAM 2GBIT LVSTL 200FBGA

IC DRAM 2GBIT LVSTL 200FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C128M16MD4-062BAN AS4C128M16MD4-062BAN AS4C128M16MD4-062BAN
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 3.5 ns 3.5 ns 3.5 ns
Density 2000000 kbits 2000000 kbits 2000000 kbits
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
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