IC DRAM 2GBIT LVSTL 200FBGA Product overview: AS4C128M16MD4-062BAN
IC DRAM 2GBIT LVSTL 200FBGA
SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL 1.6 GHz 3.5 ns 200-FBGA (10x14.5)
IC DRAM 2GBIT LVSTL 200FBGA
| ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS4C128M16MD4-062BAN | AS4C128M16MD4-062BAN | AS4C128M16MD4-062BAN | AS4C128M16MD4-062BAN |
| Product Name | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 3.5 ns | 3.5 ns | 3.5 ns | 3.5 ns |
| Cycle Time | 18 ns | |||
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |
| Address Bus Width | 16 bits |