AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM60P30AP

Description
60V 30A 40mΩ@10V,10A 35W 1.6V@250uA 1 Piece P-Channel PDFN-8(3.3x3.3) MOSFETs ROHS
  • Transistors - AGM60P30AP - ODG (Origin Data Global)
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Description
60V 30A 40mΩ@10V,10A 35W 1.6V@250uA 1 Piece P-Channel PDFN-8(3.3x3.3) MOSFETs ROHS
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Transistors - AGM60P30AP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM60P30AP
Transistors AGM60P30AP
60V 30A 40mΩ@10V,10A 35W 1.6V@250uA 1 Piece P-Channel PDFN-8(3.3x3.3) MOSFETs ROHS

60V 30A 40mΩ@10V,10A 35W 1.6V@250uA 1 Piece P-Channel PDFN-8(3.3x3.3) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM60P30AP
Product Name Transistors
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