AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM311MN

Description
30V 11A 2.5W 10.5mΩ@10V,10A 1.6V@250uA 2 N-Channel SOP-8 MOSFETs ROHS
  • Transistors - AGM311MN - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 11A 2.5W 10.5mΩ@10V,10A 1.6V@250uA 2 N-Channel SOP-8 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM311MN - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM311MN
Transistors AGM311MN
30V 11A 2.5W 10.5mΩ@10V,10A 1.6V@250uA 2 N-Channel SOP-8 MOSFETs ROHS

30V 11A 2.5W 10.5mΩ@10V,10A 1.6V@250uA 2 N-Channel SOP-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM311MN
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor - QPD0005 - Qorvo
Qorvo
2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor
QPD0005
Specs
Transistor Technology / Material 2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor
Package Type DFN
Transistor Grade / Operating Range Military
View Details
Advanced Linear Devices, Inc.
MOSFET
ALD310502SAL
Specs
Transistor Type MOSFET
View Details
Transistor - 32470700 - Radwell International
Fuji Electric Corp. of America
Transistor
ET191
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA2014-TD-E - 855067-2SA2014-TD-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA2014-TD-E
2SA2014-TD-E
Specs
Package Type SOT3
View Details