AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM30P35D

Description
30V 20A 25.5W 36.5mΩ@10V,10A 1.4V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote
Description
30V 20A 25.5W 36.5mΩ@10V,10A 1.4V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM30P35D - ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM30P35D
Transistors AGM30P35D
30V 20A 25.5W 36.5mΩ@10V,10A 1.4V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

30V 20A 25.5W 36.5mΩ@10V,10A 1.4V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM30P35D
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1610-T2-A - 906305-2SA1610-T2-A - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Single FETs, MOSFETs - 448-AIMBG75R007M2HXTMA1TR-ND - DigiKey
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
CSD17576Q5B CSD17576Q5B, 30-V N-Cannel NexFET? Power MOSFET - CSD17576Q5BT - Texas Instruments
Specs
Transistor Type Power-MOSFET
Package Type SON5x6
View Details
6 suppliers