AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM30P35AP

Description
30V 16A 34.5mΩ@10V,10A 25.5W 1.4V@250uA 1 Piece P-Channel PDFN-8L(3.3x3.3) MOSFETs ROHS
  • Transistors - AGM30P35AP - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 16A 34.5mΩ@10V,10A 25.5W 1.4V@250uA 1 Piece P-Channel PDFN-8L(3.3x3.3) MOSFETs ROHS

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Transistors - AGM30P35AP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM30P35AP
Transistors AGM30P35AP
30V 16A 34.5mΩ@10V,10A 25.5W 1.4V@250uA 1 Piece P-Channel PDFN-8L(3.3x3.3) MOSFETs ROHS

30V 16A 34.5mΩ@10V,10A 25.5W 1.4V@250uA 1 Piece P-Channel PDFN-8L(3.3x3.3) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM30P35AP
Product Name Transistors
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