AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM30P35AP

Name: Transistors
Brand: AGMSEMI Core Control Source Electronic Technology Co., Ltd.

Description

30V 16A 34.5mΩ@10V,10A 25.5W 1.4V@250uA 1 Piece P-Channel PDFN-8L(3.3x3.3) MOSFETs ROHS

Description

30V 16A 34.5mΩ@10V,10A 25.5W 1.4V@250uA 1 Piece P-Channel PDFN-8L(3.3x3.3) MOSFETs ROHS

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Shenzhen, China

Transistors
AGM30P35AP

Transistors AGM30P35AP

30V 16A 34.5mΩ@10V,10A 25.5W 1.4V@250uA 1 Piece P-Channel PDFN-8L(3.3x3.3) MOSFETs ROHS

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Fuji Electric Corp. of America

Specs

Transistor Type IGBT

Rochester Electronics

Specs

Transistor Type Bipolar RF

Polarity NPN; NPN

Transistor Technology / Material SILICON

Qorvo

Specs

Package Type Die

Micross Components, Inc.