AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM306MA

Description
30V 40A 6.8mΩ@10V,10A 80W 1.4V@250uA 2 N-Channel PDFN(5x6) MOSFETs ROHS
  • Transistors - AGM306MA - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 40A 6.8mΩ@10V,10A 80W 1.4V@250uA 2 N-Channel PDFN(5x6) MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM306MA - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM306MA
Transistors AGM306MA
30V 40A 6.8mΩ@10V,10A 80W 1.4V@250uA 2 N-Channel PDFN(5x6) MOSFETs ROHS

30V 40A 6.8mΩ@10V,10A 80W 1.4V@250uA 2 N-Channel PDFN(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM306MA
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015 - Qorvo
Qorvo
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor
QPD1015
Specs
Transistor Technology / Material GaN
Package Type NI-360
Transistor Grade / Operating Range Military
View Details
3 suppliers
Single FETs, MOSFETs - 448-AIMZA75R050M2HXKSA1-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMZA75R050M2HXKSA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-247; TO-247-4
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1478E - 855040-2SA1478E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1478E
2SA1478E
Specs
Package Type SOT3
View Details
920A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E920 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
920A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E920
Specs
Transistor Type IGBT
View Details