AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM210AP

Description
20V 25A 35W 8.5mΩ@4.5V,4A 600mV@250uA 1 N-Channel PDFN-8(3.3x3.3) MOSFETs ROHS
  • Transistors - AGM210AP - ODG (Origin Data Global)
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Description
20V 25A 35W 8.5mΩ@4.5V,4A 600mV@250uA 1 N-Channel PDFN-8(3.3x3.3) MOSFETs ROHS
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Transistors - AGM210AP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM210AP
Transistors AGM210AP
20V 25A 35W 8.5mΩ@4.5V,4A 600mV@250uA 1 N-Channel PDFN-8(3.3x3.3) MOSFETs ROHS

20V 25A 35W 8.5mΩ@4.5V,4A 600mV@250uA 1 N-Channel PDFN-8(3.3x3.3) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM210AP
Product Name Transistors
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