AGMSEMI Core Control Source Electronic Technology Co., Ltd. Transistors AGM1075MBP

Description
100V 7.2A 65mΩ@10V,10A 13W 1.6V@250uA 2 N-Channel PDFN3.3x3.3 MOSFETs ROHS
Description
100V 7.2A 65mΩ@10V,10A 13W 1.6V@250uA 2 N-Channel PDFN3.3x3.3 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AGM1075MBP - ODG (Origin Data Global)
Shenzhen, China
Transistors
AGM1075MBP
Transistors AGM1075MBP
100V 7.2A 65mΩ@10V,10A 13W 1.6V@250uA 2 N-Channel PDFN3.3x3.3 MOSFETs ROHS

100V 7.2A 65mΩ@10V,10A 13W 1.6V@250uA 2 N-Channel PDFN3.3x3.3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AGM1075MBP
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor - QPD1028 - Qorvo
Specs
Transistor Technology / Material 1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor
Package Type NI-780
Transistor Grade / Operating Range Military
View Details
2 suppliers
PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD NANOPOWER™ MATCHED PAIR - ALD310704ASCL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type SOIC16
View Details
4 suppliers
IGBT - 164556889 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2PB709ASL/PA215 - 855010-2PB709ASL/PA215 - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details