The BLF177 is an N-channel enhancement-mode RF power MOSFET for HF/VHF industrial and military use, packaged in a 4-lead flanged case measuring 0.980-1.050 in length, 0.505 in width, and 0.255 in height. It rated for 110 V drain-source voltage, 16 A continuous drain current, and 220 W power dissipation at 25°C. Thermal resistance from junction to case is 0.8 °C/W, with operating junction temperature from -65 °C to +200 °C and storage temperature from -65 °C to +150 °C. Drain-source on-resistance is 0.2-0.3 Ω at 5.0 A and 10 V. Forward transconductance is 4.5-6.2 S. Output capacitance is 190 pF at 50 V and 1 MHz. The part meets AEC-Q200 and RoHS standards.
RF MOSFET Transistors RF Transistor
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BLF177 |
| Product Name | RF MOSFET Transistors |
