The ALD1103PBL is a 14-pin plastic dual-in-line package containing a matched pair of dual N-channel and dual P-channel enhancement-mode MOSFETs for precision analog applications such as current mirrors and differential amplifiers. It operates from +2V to +10V with a gate threshold voltage of 0.7V, input impedance of 10ⁱΩ, and gate leakage current of 100 pA at 25°C. The device has a power dissipation rating of 500 mW, drain-source breakdown voltage of 10 V, and operates within a temperature range of 0°C to +70°C. It meets RoHS compliance and features matched N-channel and P-channel pairs with a Vos of 10 mV and thermal tracking. The package dimensions follow the 14-pin PDIP standard.
MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V 40mA, 16mA 500mW Through Hole 14-PDIP
Mosfet Array 2 N and 2 P-Channel Matched Pair 10.6V 40mA, 16mA 500mW Through Hole 14-PDIP
MOSFET 2N/2P-CH 10.6V 14DIP
| Advanced Linear Devices, Inc. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ALD1103PBL | 1014-1008-ND | ALD1103PBL | ALD1103PBL |
| Product Name | Dual N-Channel and Dual P-Channel Matched MOSFET Pair | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement; Enhancement Mode | |||
| V(BR)DSS | 12 volts | |||
| IDSS | -16 to 40 milliamps | |||
| rDS(on) | 75 to 270 ohms |
