Adesto Technologies Corporation, Inc. Memory AT25DF021-SSHF-B

Description
FLASH Memory IC 2Mbit SPI 50 MHz 8-SOIC
Description
FLASH Memory IC 2Mbit SPI 50 MHz 8-SOIC
Datasheet
Datasheet Summary
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The AT25DF021-SSHF-B is a 2-megabit serial Flash memory device designed for applications requiring efficient code and data storage. It operates within a supply voltage range of 2.3V to 3.6V and supports SPI communication at a maximum frequency of 50 MHz. The device features a flexible erase architecture, allowing for block sizes of 4 Kbytes, 32 Kbytes, and 64 Kbytes, as well as full chip erase capabilities. It includes individual sector protection for four 64 Kbyte sectors, which can be globally protected or unprotected via a dedicated pin. The memory supports fast programming and erasing, with typical page programming times of 1.0 ms and block erase times ranging from 50 ms to 450 ms, depending on the block size. The AT25DF021-SSHF-B is designed for low power consumption, with a typical active read current of 7 mA and a deep power-down current of 15 OºA. It has an endurance of 100,000 program/erase cycles and a data retention period of 20 years, making it suitable for long-term applications. The device is available in RoHS-compliant packaging options, including an 8-lead SOIC and an ultra-thin DFN package.

Datasheet Summary
Powered by GS/AI

The AT25DF021-SSHF-B is a 2-megabit serial Flash memory device designed for applications requiring efficient code and data storage. It operates within a supply voltage range of 2.3V to 3.6V and supports SPI communication at a maximum frequency of 50 MHz. The device features a flexible erase architecture, allowing for block sizes of 4 Kbytes, 32 Kbytes, and 64 Kbytes, as well as full chip erase capabilities. It includes individual sector protection for four 64 Kbyte sectors, which can be globally protected or unprotected via a dedicated pin. The memory supports fast programming and erasing, with typical page programming times of 1.0 ms and block erase times ranging from 50 ms to 450 ms, depending on the block size. The AT25DF021-SSHF-B is designed for low power consumption, with a typical active read current of 7 mA and a deep power-down current of 15 OºA. It has an endurance of 100,000 program/erase cycles and a data retention period of 20 years, making it suitable for long-term applications. The device is available in RoHS-compliant packaging options, including an 8-lead SOIC and an ultra-thin DFN package.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT25DF021-SSHF-B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 2Mbit SPI 50 MHz 8-SOIC

FLASH Memory IC 2Mbit SPI 50 MHz 8-SOIC

Buy Now Datasheet
Memory - AT25DF021-SSHF-B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 2Mbit SPI 50 MHz 8-SOIC

FLASH Memory IC 2Mbit SPI 50 MHz 8-SOIC

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number AT25DF021-SSHF-B
Product Name Memory
Memory Category Flash; FLASH
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