CSD23202W10 12 V P-Channel NexFET(TM) Power MOSFET 4-DSBGA
P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection 4-DSBGA -55 to 150 Product overview: CSD23202W10T from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 53 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 53 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD23202W10T can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 867369-CSD23202W10T
Series: NexFET™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 12 V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
Package: 4-UFBGA, DSBGA
Package: Reel - TR
Mounting: Surface Mount
Family Name: CSD23202
Categories: Discrete Semiconductor Products
Case / Package: 4-DSBGA (1x1)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Limited
Quantity per package: 250
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 11 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 296-38338-6, 296-38338-1, 296-38338-2
MOSFET, P CH, -12V, -2.2A, DSBGA-4; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power RoHS Compliant: Yes
MOSFET P-CH 12V 2.2A 4DSBGA
| Texas Instruments | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD23202W10T | 296-38338-2-ND | 278-CSD23202W10T | 867369-CSD23202W10T | 29AH3849 | CSD23202W10T | CSD23202W10T |
| Product Name | CSD23202W10 CSD23202W10 12 V P-Channel NexFET(TM) Power MOSFET | Single FETs, MOSFETs | P-Channel 53 mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23202W10T | Mosfet, P Ch, -12V, -2.2A, Dsbga-4; Transistor Polarity Texas Instruments | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | ||||
| V(BR)DSS | -12 volts | ||||||
| rDS(on) | 0.0530 ohms | 0.0440 ohms | |||||
| IDSS | -25000 milliamps | -2200 milliamps |
