30V N Channel NexFET? Power MOSFET 6-WSON -55 to 150
MOSFET N-CH 30V 5A 6WSON
N-Channel 30V 5A (Tc) 2.3W (Ta) Surface Mount 6-WSON (2x2)
N-Channel 30V 5A (Tc) 2.3W (Ta) Surface Mount 6-WSON (2x2)
N-Channel 30V 5A (Tc) 2.3W (Ta) Surface Mount 6-WSON (2x2)
Manufacturer: Texas Instruments
Win Source Part Number: 013366-CSD17313Q2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 17W (Tc)
Family Name: CSD17313Q2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WSON (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 2.7nC @ 4.5V
Max Input Capacitance: 340pF @ 15V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 30 mOhm @ 4A, 8V
Alternative Parts (Cross-Reference): SiA408DJ-T1-GE3; SiA408DJ; NTLJS4159NT1G; FDMA430NZ;
Introduction Date: March 01, 2010
Country of Origin: China, Malaysia
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 5A 6WSON
30V 5A 2.3W 30mΩ@4A,8V 1.8V@250uA null WSON-6(2x2) MOSFETs ROHS
MOSFET 30V N Channel NexFET Power MOSFET
MOSFET, N CH, 30V, 5A, SON-6; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.3V; Power Dissipation RoHS Compliant: Yes
| Texas Instruments | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD17313Q2 | CSD17313Q2 | 296-27233-1-ND | 013366-CSD17313Q2 | CSD17313Q2 | CSD17313Q2 | CSD17313Q2 | 29AH3828 |
| Product Name | CSD17313Q2 30V N Channel NexFET? Power MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17313Q2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Mosfet, N Ch, 30V, 5A, Son-6; Transistor Polarity Texas Instruments |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| rDS(on) | 0.0320 ohms | 0.0300 ohms | 0.0240 ohms | |||||
| IDSS | 20000 milliamps | 5000 milliamps | 5000 milliamps | |||||
| QG | 2.1 nC |
