Rochester Electronics Memory AT28C010E-12EM

Description
EEPROM, 128KX8, 120NS, PARALLEL
  • Memory - AT28C010E-12EM - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EEPROM, 128KX8, 120NS, PARALLEL
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28C010E-12EM - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AT28C010E-12EM
Memory AT28C010E-12EM
EEPROM, 128KX8, 120NS, PARALLEL

EEPROM, 128KX8, 120NS, PARALLEL

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number AT28C010E-12EM
Product Name Memory
Memory Category EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

SMV512K32-SP 16MB Radiation-Hardened SRAM - SMV512K32HFG/EM - Texas Instruments
Texas Instruments
SMV512K32-SP 16MB Radiation-Hardened SRAM
SMV512K32HFG/EM
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
Flash Memory - 1882749P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882749P
Specs
Memory Category Flash
Density 2048000 kbits
Package Type SOIC; SOIC
View Details
Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS28C010
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 170-0157-000 D - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
170-0157-000 D
View Details
2 suppliers