Rochester Electronics Memory AT28C010E-12EM

Description
EEPROM, 128KX8, 120NS, PARALLEL
  • Memory - AT28C010E-12EM - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EEPROM, 128KX8, 120NS, PARALLEL
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28C010E-12EM - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AT28C010E-12EM
Memory AT28C010E-12EM
EEPROM, 128KX8, 120NS, PARALLEL

EEPROM, 128KX8, 120NS, PARALLEL

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number AT28C010E-12EM
Product Name Memory
Memory Category EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

SMV512K32-SP 16MB Radiation-Hardened SRAM - 5962-1123701VXC - Texas Instruments
Texas Instruments
SMV512K32-SP 16MB Radiation-Hardened SRAM
5962-1123701VXC
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
3 suppliers
Infineon Technologies AG
Integrated Circuits (ICs) - Memory - Memory
40060304
View Details
Logic - FIFOs Memory - 5962-9470401QXA - Lingto Electronic Limited
Rochester Electronics
Logic - FIFOs Memory
5962-9470401QXA
Specs
Data Rate 50 MHz
Operating Current 95 mA
View Details
SDRAM - 1882578 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
1882578
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details