Rochester Electronics Memory 29110BJA

Description
2K X 8 ASYNCHRONOUS CMOS SRAM
  • Memory - 29110BJA - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
2K X 8 ASYNCHRONOUS CMOS SRAM
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 29110BJA - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
29110BJA
Memory 29110BJA
2K X 8 ASYNCHRONOUS CMOS SRAM

2K X 8 ASYNCHRONOUS CMOS SRAM

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number 29110BJA
Product Name Memory
Memory Category SRAM; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 448-CY14B101I-SFXITTR-ND - DigiKey
Infineon Technologies AG
Memory
CY14B101I-SFXIT
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits
View Details
4 suppliers
Memory - SMJ416160 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ416160
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
- 27S03A/BEA - Rochester Electronics
Rochester Electronics
Memory
27S03A/BEA
Specs
Memory Category SRAM Chip
Density 0 kbits
Package Type DIP; CDIP16
View Details
4 suppliers
Flash Memory - 1882635P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882635P
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details