Qorvo 1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor QPD1426

Description
The QPD1426 is a 220 W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 53.5 dBm of saturated output power with 17 dB of large-signal gain and 70% of drain efficiency. The device's compact size and high efficiency optimize SWaP attributes, resulting in smaller and lighter power amplifiers, along with lower thermal management costs. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available upon request.
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Description
The QPD1426 is a 220 W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 53.5 dBm of saturated output power with 17 dB of large-signal gain and 70% of drain efficiency. The device's compact size and high efficiency optimize SWaP attributes, resulting in smaller and lighter power amplifiers, along with lower thermal management costs. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available upon request.
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1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor - QPD1426 - Qorvo
Greensboro, NC, United States
1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor
QPD1426
1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor QPD1426
The QPD1426 is a 220 W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 53.5 dBm of saturated output power with 17 dB of large-signal gain and 70% of drain efficiency. The device's compact size and high efficiency optimize SWaP attributes, resulting in smaller and lighter power amplifiers, along with lower thermal management costs. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available upon request.

The QPD1426 is a 220 W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 53.5 dBm of saturated output power with 17 dB of large-signal gain and 70% of drain efficiency.

The device's compact size and high efficiency optimize SWaP attributes, resulting in smaller and lighter power amplifiers, along with lower thermal management costs. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.

Evaluation boards are available upon request.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category Power Amplifiers
Product Number QPD1426
Product Name 1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor
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