Qorvo 0.03 - 1.215 GHz, 15 Watt, 28 Volt GaN RF Input-Matched Transistor QPD1000

Description
Qorvo's QPD1000 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. Lead-free and ROHS compliant Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
  • 0.03 - 1.215 GHz, 15 Watt, 28 Volt GaN RF Input-Matched Transistor - QPD1000 - Qorvo
    Qorvo
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Description
Qorvo's QPD1000 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. Lead-free and ROHS compliant Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
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0.03 - 1.215 GHz, 15 Watt, 28 Volt GaN RF Input-Matched Transistor - QPD1000 - Qorvo
Qorvo
Greensboro, NC, United States
0.03 - 1.215 GHz, 15 Watt, 28 Volt GaN RF Input-Matched Transistor
QPD1000
0.03 - 1.215 GHz, 15 Watt, 28 Volt GaN RF Input-Matched Transistor QPD1000
Qorvo's QPD1000 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. Lead-free and ROHS compliant Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.

Qorvo's QPD1000 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

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Technical Specifications

  Qorvo
Product Category Power Amplifiers
Product Number QPD1000
Product Name 0.03 - 1.215 GHz, 15 Watt, 28 Volt GaN RF Input-Matched Transistor
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