Qorvo 2.7 - 3.5 GHz, 2 Watt S-Band GaN Driver Amplifier QPA2935

Description
Qorvo's QPA2935 is a MMIC power amplifier fabricated using Qorvo's QGaN25 0.25 um GaN on SiC production process. Covering 2.7 - 3.5 GHz, the QPA2935 typically provides 33 dBm of saturated output power and 18 dB of large-signal gain while achieving greater than 52 % power-added efficiency. The QPA2935 can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA2935 is matched to 50 ohms with integrated DC blocking caps on both I/O ports. The QPA2935 is packaged in a plastic overmolded 4x4 mm package. The QPA2935 is 100% DC and RF tested to ensure compliance to electrical specifications. Lead free and RoHS compliant.
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Description
Qorvo's QPA2935 is a MMIC power amplifier fabricated using Qorvo's QGaN25 0.25 um GaN on SiC production process. Covering 2.7 - 3.5 GHz, the QPA2935 typically provides 33 dBm of saturated output power and 18 dB of large-signal gain while achieving greater than 52 % power-added efficiency. The QPA2935 can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA2935 is matched to 50 ohms with integrated DC blocking caps on both I/O ports. The QPA2935 is packaged in a plastic overmolded 4x4 mm package. The QPA2935 is 100% DC and RF tested to ensure compliance to electrical specifications. Lead free and RoHS compliant.
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2.7 - 3.5 GHz, 2 Watt S-Band GaN Driver Amplifier - QPA2935 - Qorvo
Greensboro, NC, United States
2.7 - 3.5 GHz, 2 Watt S-Band GaN Driver Amplifier
QPA2935
2.7 - 3.5 GHz, 2 Watt S-Band GaN Driver Amplifier QPA2935
Qorvo's QPA2935 is a MMIC power amplifier fabricated using Qorvo's QGaN25 0.25 um GaN on SiC production process. Covering 2.7 - 3.5 GHz, the QPA2935 typically provides 33 dBm of saturated output power and 18 dB of large-signal gain while achieving greater than 52 % power-added efficiency. The QPA2935 can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA2935 is matched to 50 ohms with integrated DC blocking caps on both I/O ports. The QPA2935 is packaged in a plastic overmolded 4x4 mm package. The QPA2935 is 100% DC and RF tested to ensure compliance to electrical specifications. Lead free and RoHS compliant.

Qorvo's QPA2935 is a MMIC power amplifier fabricated using Qorvo's QGaN25 0.25 um GaN on SiC production process. Covering 2.7 - 3.5 GHz, the QPA2935 typically provides 33 dBm of saturated output power and 18 dB of large-signal gain while achieving greater than 52 % power-added efficiency.
The QPA2935 can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA2935 is matched to 50 ohms with integrated DC blocking caps on both I/O ports.
The QPA2935 is packaged in a plastic overmolded 4x4 mm package. The QPA2935 is 100% DC and RF tested to ensure compliance to electrical specifications.
Lead free and RoHS compliant.

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Technical Specifications

  Qorvo
Product Category Power Amplifiers
Product Number QPA2935
Product Name 2.7 - 3.5 GHz, 2 Watt S-Band GaN Driver Amplifier
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