Qorvo 1.2 - 1.4 GHz, 1500 Watt, 65 Volt, GaN RF Input-Matched Transistor QPD1029L

Description
The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations. Lead-free and ROHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
  • 1.2 - 1.4 GHz, 1500 Watt, 65 Volt, GaN RF Input-Matched Transistor - QPD1029L - Qorvo
    Qorvo
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Description
The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations. Lead-free and ROHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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1.2 - 1.4 GHz, 1500 Watt, 65 Volt, GaN RF Input-Matched Transistor - QPD1029L - Qorvo
Qorvo
Greensboro, NC, United States
1.2 - 1.4 GHz, 1500 Watt, 65 Volt, GaN RF Input-Matched Transistor
QPD1029L
1.2 - 1.4 GHz, 1500 Watt, 65 Volt, GaN RF Input-Matched Transistor QPD1029L
The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations. Lead-free and ROHS compliant. For additional information on GaN thermal performance refer to the following application note and video.

The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

Lead-free and ROHS compliant.

For additional information on GaN thermal performance refer to the following application note and video.

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Technical Specifications

  Qorvo
Product Category Power Amplifiers
Product Number QPD1029L
Product Name 1.2 - 1.4 GHz, 1500 Watt, 65 Volt, GaN RF Input-Matched Transistor
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