PREMA Semiconductor GmbH Dual Silicon Photodiode PR5030

Description
Two Triangular shaped Silicon Junctions PR5030 is a dual silicon photodiode with two separate cathodes and one common anode. Each photodiode has a triangular shape to form an interface along the diagonal of the die. Therefore, the two segments allow to resolve a position of a slit or an edge above. Both types offer a low dark current combined with a high sensitivity. The dies are moulded into a small plastic leadless optical DFN package. APPLICATIONS: LASER beam alignment position detection ambient light detection
Datasheet
Description
Two Triangular shaped Silicon Junctions PR5030 is a dual silicon photodiode with two separate cathodes and one common anode. Each photodiode has a triangular shape to form an interface along the diagonal of the die. Therefore, the two segments allow to resolve a position of a slit or an edge above. Both types offer a low dark current combined with a high sensitivity. The dies are moulded into a small plastic leadless optical DFN package. APPLICATIONS: LASER beam alignment position detection ambient light detection
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Dual Silicon Photodiode - PR5030 - PREMA Semiconductor GmbH
Mainz, Germany
Dual Silicon Photodiode
PR5030
Dual Silicon Photodiode PR5030
Two Triangular shaped Silicon Junctions PR5030 is a dual silicon photodiode with two separate cathodes and one common anode. Each photodiode has a triangular shape to form an interface along the diagonal of the die. Therefore, the two segments allow to resolve a position of a slit or an edge above. Both types offer a low dark current combined with a high sensitivity. The dies are moulded into a small plastic leadless optical DFN package. APPLICATIONS: LASER beam alignment position detection ambient light detection

Two Triangular shaped Silicon Junctions

PR5030 is a dual silicon photodiode with two separate cathodes and one common anode. Each photodiode has a triangular shape to form an interface along the diagonal of the die. Therefore, the two segments allow to resolve a position of a slit or an edge above. Both types offer a low dark current combined with a high sensitivity. The dies are moulded into a small plastic leadless optical DFN package.

APPLICATIONS:

  • LASER beam alignment
  • position detection
  • ambient light detection
Supplier's Site Datasheet

Technical Specifications

  PREMA Semiconductor GmbH
Product Category Photodiodes
Product Number PR5030
Product Name Dual Silicon Photodiode
Photodiode Type PN Photodiode
Photodiode Spectral Response Visible; IR
Peak Sensitivity Wavelength 830 nm (8300 Å)
Photodiode Material Silicon
Unlock Full Specs
to access all available technical data

Similar Products

Integrating Sphere Detector, Collimated Beam, 2.0 in., 200-1100 nm - 819C-UV-2-CALV2 - Newport MKS
Specs
Spectral Response Range 200 to 1100 nm (2000 to 11000 Å)
View Details
Si APDs - S15413-02 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type Avalanche Photodiode
Spectral Response Range 400 to 1000 nm (4000 to 10000 Å)
Peak Sensitivity Wavelength 760 nm (7600 Å)
View Details
Photodiodes - 2121833 - RS Components, Ltd.
RS Components, Ltd.
Specs
Photodiode Spectral Response IR
Peak Sensitivity Wavelength 5000 nm (50000 Å)
Photodiode Package Ceramic
View Details
Four-Quadrant Photodiode - PR5401 - PREMA Semiconductor GmbH
PREMA Semiconductor GmbH
Specs
Photodiode Type PN Photodiode
Photodiode Spectral Response Visible; IR
Spectral Response Range 950 nm (9500 Å)
View Details