OSI Optoelectronics Large Active Area, High Speed Photodiode PIN-RD07

Description
The Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in Nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area. The Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods. Indirect and direct.
Datasheet
Description
The Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in Nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area. The Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods. Indirect and direct.
Datasheet

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Large Active Area, High Speed Photodiode - PIN-RD07 - OSI Optoelectronics
Hawthorne, CA, United States
Large Active Area, High Speed Photodiode
PIN-RD07
Large Active Area, High Speed Photodiode PIN-RD07
The Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in Nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area. The Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods. Indirect and direct.

The Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in Nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area. The Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods. Indirect and direct.

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Technical Specifications

  OSI Optoelectronics
Product Category Photodiodes
Product Number PIN-RD07
Product Name Large Active Area, High Speed Photodiode
Photodiode Type PIN Photodiode
Photodiode Spectral Response X-ray
Spectral Response Range 350 to 1100 nm (3500 to 11000 Å)
Peak Sensitivity Wavelength 900 nm (9000 Å)
Photodiode Material Silicon
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