OSI Optoelectronics Chip on Carrier Photodiode FCI-InGaAS-400ACER

Description
FCI-InGaAs-XXX-ACER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm is part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. The chips can be epoxy/eutectic mounted onto the angled ceramic substrate.
Datasheet
Description
FCI-InGaAs-XXX-ACER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm is part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. The chips can be epoxy/eutectic mounted onto the angled ceramic substrate.
Datasheet

Suppliers

Company
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Description
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Chip on Carrier Photodiode - FCI-InGaAS-400ACER - OSI Optoelectronics
Hawthorne, CA, United States
Chip on Carrier Photodiode
FCI-InGaAS-400ACER
Chip on Carrier Photodiode FCI-InGaAS-400ACER
FCI-InGaAs-XXX-ACER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm is part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. The chips can be epoxy/eutectic mounted onto the angled ceramic substrate.

FCI-InGaAs-XXX-ACER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm is part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. The chips can be epoxy/eutectic mounted onto the angled ceramic substrate.

Supplier's Site Datasheet

Technical Specifications

  OSI Optoelectronics
Product Category Photodiodes
Product Number FCI-InGaAS-400ACER
Product Name Chip on Carrier Photodiode
Photodiode Type PIN Photodiode
Photodiode Spectral Response IR
Spectral Response Range 1100 to 1650 nm (11000 to 16500 Å)
Photodiode Material Indium Gallium Arsenide
Active Area Diameter or Length 0.4000 mm (0.0157 inch)
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