OSI Optoelectronics Chip on Carrier Photodiode FCI-InGaAS-300WCER

Description
FCI-InGaAs-XXX-WCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of a line of monitor photodiodes mounted on metallized ceramic substrates. These compact assemblies are designed for ease of integration. The chips can be epoxy or Eutectic mounted onto the ceramic substrate.
Datasheet
Description
FCI-InGaAs-XXX-WCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of a line of monitor photodiodes mounted on metallized ceramic substrates. These compact assemblies are designed for ease of integration. The chips can be epoxy or Eutectic mounted onto the ceramic substrate.
Datasheet

Suppliers

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Chip on Carrier Photodiode - FCI-InGaAS-300WCER - OSI Optoelectronics
Hawthorne, CA, United States
Chip on Carrier Photodiode
FCI-InGaAS-300WCER
Chip on Carrier Photodiode FCI-InGaAS-300WCER
FCI-InGaAs-XXX-WCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of a line of monitor photodiodes mounted on metallized ceramic substrates. These compact assemblies are designed for ease of integration. The chips can be epoxy or Eutectic mounted onto the ceramic substrate.

FCI-InGaAs-XXX-WCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of a line of monitor photodiodes mounted on metallized ceramic substrates. These compact assemblies are designed for ease of integration. The chips can be epoxy or Eutectic mounted onto the ceramic substrate.

Supplier's Site Datasheet

Technical Specifications

  OSI Optoelectronics
Product Category Photodiodes
Product Number FCI-InGaAS-300WCER
Product Name Chip on Carrier Photodiode
Photodiode Type PIN Photodiode
Photodiode Spectral Response IR
Spectral Response Range 900 to 1700 nm (9000 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
Photodiode Material Indium Gallium Arsenide
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