OSI Optoelectronics Large Area InGaAs Photodiode FCI-InGaAS-1500-X

Description
FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics' large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals. These large active area devices are ideal for use in infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MO.
Datasheet
Description
FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics' large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals. These large active area devices are ideal for use in infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MO.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Large Area InGaAs Photodiode - FCI-InGaAS-1500-X - OSI Optoelectronics
Hawthorne, CA, United States
Large Area InGaAs Photodiode
FCI-InGaAS-1500-X
Large Area InGaAs Photodiode FCI-InGaAS-1500-X
FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics' large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals. These large active area devices are ideal for use in infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MO.

FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics' large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals. These large active area devices are ideal for use in infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MO.

Supplier's Site Datasheet

Technical Specifications

  OSI Optoelectronics
Product Category Photodiodes
Product Number FCI-InGaAS-1500-X
Product Name Large Area InGaAs Photodiode
Photodiode Type PIN Photodiode
Photodiode Spectral Response IR
Spectral Response Range 900 to 1700 nm (9000 to 17000 Å)
Photodiode Material Indium Gallium Arsenide
Photodiode Package TO-46 or TO-5
Unlock Full Specs
to access all available technical data

Similar Products

Integrating Sphere Detector, Diverging Beam, 5.3 in., 400-1100 nm - 819D-SL-5.3-CAL2 - Newport MKS
Specs
Spectral Response Range 400 to 1100 nm (4000 to 11000 Å)
View Details
Photodiodes - 2121833 - RS Components, Ltd.
RS Components, Ltd.
Specs
Photodiode Spectral Response IR
Peak Sensitivity Wavelength 5000 nm (50000 Å)
Photodiode Package Ceramic
View Details
Si APDs - S12023-10A - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type Avalanche Photodiode
Photodiode Spectral Response IR
Spectral Response Range 400 to 1000 nm (4000 to 10000 Å)
View Details
TSL1401 Linear Array Sensor.  128 x 1, with hold 400 DPI - TSL1401CL - ams
Specs
Array Array
Number of Array Elements 128
Operating Temperature -25 to 85 C (-13 to 185 F)
View Details