OSI Optoelectronics Silicon Avalanche Photodiode APD-300L

Description
Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.
Datasheet
Description
Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.
Datasheet

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Silicon Avalanche Photodiode - APD-300L - OSI Optoelectronics
Hawthorne, CA, United States
Silicon Avalanche Photodiode
APD-300L
Silicon Avalanche Photodiode APD-300L
Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.

Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.

Supplier's Site Datasheet

Technical Specifications

  OSI Optoelectronics
Product Category Photodiodes
Product Number APD-300L
Product Name Silicon Avalanche Photodiode
Photodiode Type Avalanche Photodiode
Photodiode Spectral Response Visible; IR
Spectral Response Range 350 to 1100 nm (3500 to 11000 Å)
Peak Sensitivity Wavelength 820 nm (8200 Å)
Photodiode Material Silicon
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