Nexperia B.V. 60 V, 1.7 A PNP low VCEsat transistor PBSS5260QAZ

Description
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS4260QA. Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet
Description
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS4260QA. Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 1.7 A PNP low VCEsat transistor - PBSS5260QAZ - Nexperia B.V.
Nijmegen, Netherlands
60 V, 1.7 A PNP low VCEsat transistor
PBSS5260QAZ
60 V, 1.7 A PNP low VCEsat transistor PBSS5260QAZ
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS4260QA. Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

PNP complement: PBSS4260QA.

Features and benefits

  • Very Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High energy efficiency due to less heat generation
  • Reduced Printed-Circuit Board (PCB) area requirments
  • Solderable side pads

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-2386-1-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2386-1-ND
Single Bipolar Transistors 1727-2386-1-ND
Bipolar (BJT) Transistor PNP 60V 1.7A 150MHz 325mW Surface Mount DFN1010D-3

Bipolar (BJT) Transistor PNP 60V 1.7A 150MHz 325mW Surface Mount DFN1010D-3

Buy Now Datasheet
Single Bipolar Transistors - 1727-2386-2-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2386-2-ND
Single Bipolar Transistors 1727-2386-2-ND
Bipolar (BJT) Transistor PNP 60V 1.7A 150MHz 325mW Surface Mount DFN1010D-3

Bipolar (BJT) Transistor PNP 60V 1.7A 150MHz 325mW Surface Mount DFN1010D-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1377069-PBSS5260QAZ - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1377069-PBSS5260QAZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1377069-PBSS5260QAZ
Win Source Part Number: 1377069-PBSS5260QAZ Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 40 pct. MSL Level: 1 (Unlimited) Mfr: Nexperia USA Inc. Series: Automotive, AEC-Q100 Package: Tape & Reel Product Status: Active Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3 Base Product Number: PBSS5260 Mounting Type: Surface Mount HTSUS: 8541.21.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 1.7 A Voltage - Collector Emitter Breakdown (Max): 60 V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 325 mW

Win Source Part Number: 1377069-PBSS5260QAZ
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q100
Package: Tape & Reel
Product Status: Active
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Base Product Number: PBSS5260
Mounting Type: Surface Mount
HTSUS: 8541.21.0075
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 325 mW

Buy Now Datasheet
 - PBSS5260QAZ - Rochester Electronics
Newburyport, MA, United States
PBSS5260QA - Small Signal Bipolar Transistor, DFN1010D-3

PBSS5260QA - Small Signal Bipolar Transistor, DFN1010D-3

Supplier's Site Datasheet
Singapore, Singapore
60 V 1.7 A DFN Bipolar Transistor
276-PBSS5260QAZ
60 V 1.7 A DFN Bipolar Transistor 276-PBSS5260QAZ
PBSS5260QA - 60 V, 1.7 A PNP low VCEsat (BISS) transistor DFN 3-Pin Product overview: PBSS5260QAZ from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 1.7 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 1.7 A, DFN, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5260QAZ can be used for catalog matching and distributor lookup.

PBSS5260QA - 60 V, 1.7 A PNP low VCEsat (BISS) transistor DFN 3-Pin Product overview: PBSS5260QAZ from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 1.7 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 1.7 A, DFN, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5260QAZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - PBSS5260QAZ - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PBSS5260QAZ
Single Bipolar Transistors PBSS5260QAZ
TRANS PNP 60V 1.7A DFN1010D-3

TRANS PNP 60V 1.7A DFN1010D-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5260QAZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5260QAZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5260QAZ
TRANS PNP 60V 1.7A DFN1010D-3

TRANS PNP 60V 1.7A DFN1010D-3

Supplier's Site
Bipolar (Bjt) Single Transistor, Pnp, -60 V, 150 Mhz, 325 Mw, -1.7 A, 30 Rohs Compliant Nexperia - 68Y7779 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Pnp, -60 V, 150 Mhz, 325 Mw, -1.7 A, 30 Rohs Compliant Nexperia
68Y7779
Bipolar (Bjt) Single Transistor, Pnp, -60 V, 150 Mhz, 325 Mw, -1.7 A, 30 Rohs Compliant Nexperia 68Y7779
Bipolar (BJT) Single Transistor, PNP, -60 V, 150 MHz, 325 mW, -1.7 A, 30 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, PNP, -60 V, 150 MHz, 325 mW, -1.7 A, 30 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS5260QAZ 1727-2386-1-ND 1377069-PBSS5260QAZ PBSS5260QAZ 276-PBSS5260QAZ PBSS5260QAZ PBSS5260QAZ 68Y7779
Product Name 60 V, 1.7 A PNP low VCEsat transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 60 V 1.7 A DFN Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar (Bjt) Single Transistor, Pnp, -60 V, 150 Mhz, 325 Mw, -1.7 A, 30 Rohs Compliant Nexperia
Package Type SOT1215 SOT1215 3-XDFN Exposed Pad SOT3 SOT1215 3-XDFN Exposed Pad DFN1010D-3 TO-3
Polarity PNP PNP PNP; PNP PNP
Transistor Grade / Operating Range Automotive
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 1700 milliamps 1700 milliamps
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