PNP low VCEsat transistor in a SOT23 surface-mounted plastic package measuring 2.9 mm x 1.3 mm x 1 mm, rated for a maximum collector-emitter voltage of -20 V and a continuous collector current of -2 A, with a peak collector current of -3 A for pulses up to 1 ms. It has a collector-emitter saturation voltage of -250 mV at -2 A collector current and -100 mA base current, and a saturation resistance of 113 mΩ under specified pulsed conditions. Operating junction temperature ranges from -65 °C to 150 °C. The device is not automotive qualified and meets IEC 60134 absolute maximum ratings.
PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Features and benefits
Applications
PBSS5220T - 20 V, 2 A PNP low VCEsat (BISS) transistor TO-236 3-Pin Product overview: PBSS5220T,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20 V, 2 A. Search-friendly keywords include transistor, BJT, switching, amplification, 20 V, 2 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5220T,215 can be used for catalog matching and distributor lookup.
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Bipolar (BJT) Transistor PNP 20V 2A 100MHz 480mW Surface Mount TO-236AB
Bipolar (BJT) Transistor PNP 20V 2A 100MHz 480mW Surface Mount TO-236AB
Bipolar (BJT) Transistor PNP 20V 2A 100MHz 480mW Surface Mount TO-236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086506-PBSS5220T,21
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Max Vce (sat): 225mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 1A, 2V
Maximum Power Dissipation: 480mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
Bipolar (BJT) Single Transistor, PNP, 20 V, 300 mW, 2 A, 225 RoHS Compliant: Yes
TRANS PNP 20V 2A TO236AB
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS5220T,215 | 276-PBSS5220T,215 | PBSS5220T,215 | 1727-5118-1-ND | 1086506-PBSS5220T,215 | 38K6412 | PBSS5220T,215 |
| Product Name | 20 V, 2 A PNP low VCEsat transistor | 20 V 2 A Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - PBSS5220T,215 | Bipolar (Bjt) Single Transistor, Pnp, 20 V, 300 Mw, 2 A, 225 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Package Type | SOT23; SOT23 SOT23 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; TO-236AB (SOT23) | TO-3 | TO-236AB |
