Nexperia B.V. N-channel 40 V, 2.5 mΩ standard level MOSFET in LFPAK56 BUK7Y2R5-40HX

Description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits Fully automotive qualified to AEC-Q101: 175 °C rating suitable for thermally demanding environments Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
Request a Quote Datasheet
Description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits Fully automotive qualified to AEC-Q101: 175 °C rating suitable for thermally demanding environments Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 2.5 mΩ standard level MOSFET in LFPAK56 - BUK7Y2R5-40HX - Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 2.5 mΩ standard level MOSFET in LFPAK56
BUK7Y2R5-40HX
N-channel 40 V, 2.5 mΩ standard level MOSFET in LFPAK56 BUK7Y2R5-40HX
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits Fully automotive qualified to AEC-Q101: 175 °C rating suitable for thermally demanding environments Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.

Features and benefits

  • Fully automotive qualified to AEC-Q101:
    • 175 °C rating suitable for thermally demanding environments

Applications

  • 12 V automotive systems
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching
Supplier's Site Datasheet
 - BUK7Y2R5-40HX - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-7422-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7422-1-ND
Single FETs, MOSFETs 1727-7422-1-ND
N-Channel 40V 120A (Ta) 190W (Ta) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 120A (Ta) 190W (Ta) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7422-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7422-6-ND
Single FETs, MOSFETs 1727-7422-6-ND
N-Channel 40V 120A (Ta) 190W (Ta) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 120A (Ta) 190W (Ta) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7422-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7422-2-ND
Single FETs, MOSFETs 1727-7422-2-ND
N-Channel 40V 120A (Ta) 190W (Ta) Surface Mount LFPAK56, Power-SO8

N-Channel 40V 120A (Ta) 190W (Ta) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK7Y2R5-40HX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK7Y2R5-40HX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK7Y2R5-40HX
MOSFET N-CH 40V 120A LFPAK56

MOSFET N-CH 40V 120A LFPAK56

Supplier's Site
Mosfet, Aec-Q101, N-Ch, 40V, Sot-669-4; Transistor Polarity Nexperia - 46AC0529 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 40V, Sot-669-4; Transistor Polarity Nexperia
46AC0529
Mosfet, Aec-Q101, N-Ch, 40V, Sot-669-4; Transistor Polarity Nexperia 46AC0529
MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00213ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00213ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - BUK7Y2R5-40HX - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BUK7Y2R5-40HX
Single FETs, MOSFETs BUK7Y2R5-40HX
MOSFET N-CH 40V 120A LFPAK56

MOSFET N-CH 40V 120A LFPAK56

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK7Y2R5-40HX BUK7Y2R5-40HX 1727-7422-1-ND BUK7Y2R5-40HX 46AC0529 BUK7Y2R5-40HX
Product Name N-channel 40 V, 2.5 mΩ standard level MOSFET in LFPAK56 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 40V, Sot-669-4; Transistor Polarity Nexperia Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts 40 volts
IDSS 120000 milliamps 120000 milliamps 120000 milliamps
VGS(off) 20 volts
PD 190 milliwatts 190000 milliwatts
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