Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
Features and benefits
Applications
Power Field-Effect Transistor
N-Channel 40V 120A (Ta) 190W (Ta) Surface Mount LFPAK56, Power-SO8
N-Channel 40V 120A (Ta) 190W (Ta) Surface Mount LFPAK56, Power-SO8
N-Channel 40V 120A (Ta) 190W (Ta) Surface Mount LFPAK56, Power-SO8
MOSFET N-CH 40V 120A LFPAK56
MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00213ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 40V 120A LFPAK56
| Nexperia B.V. | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK7Y2R5-40HX | BUK7Y2R5-40HX | 1727-7422-1-ND | BUK7Y2R5-40HX | 46AC0529 | BUK7Y2R5-40HX |
| Product Name | N-channel 40 V, 2.5 mΩ standard level MOSFET in LFPAK56 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 40V, Sot-669-4; Transistor Polarity Nexperia | Single FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 40 volts | 40 volts | ||||
| IDSS | 120000 milliamps | 120000 milliamps | 120000 milliamps | |||
| VGS(off) | 20 volts | |||||
| PD | 190 milliwatts | 190000 milliwatts |