N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 5.5A (Ta), 17A (Tc) 2W (Ta), 19W (Tc) Surface Mount DFN2020MD-6
N-Channel 30V 5.5A (Ta), 17A (Tc) 2W (Ta), 19W (Tc) Surface Mount DFN2020MD-6
N-Channel 30V 5.5A (Ta), 17A (Tc) 2W (Ta), 19W (Tc) Surface Mount DFN2020MD-6
MOSFET N-CH 30V 5.5A/17A 6DFN
MOSFET N-CH 30V 5.5A/17A 6DFN
MOSFET, AEC-Q101, N-CH, 30V, DFN2020MD; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
MOSFET BUK6D38-30E/SOT1220/
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK6D38-30EX | 1727-BUK6D38-30EXTR-ND | BUK6D38-30EX | BUK6D38-30EX | 07AH3639 | BUK6D38-30EX |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 30V, Dfn2020Md; Transistor Polarity Nexperia | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 17000 milliamps | 5500 milliamps | 17000 milliamps | |||
| VGS(off) | 20 volts | |||||
| PD | 19 milliwatts | 2000 milliwatts |