Gelest, Inc. DIIODOSILANE, 99% SID3520.1

Description
Additional Properties Hydrolytic Sensitivity 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required Safety Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Diiodosilane; Silicon diiodide High purity grade for ALD ?Hvap: 33.7 kJ/mol Surface tension, 15 °: 44.1 mN/m Cleaves ethers; converts alcohols to iodides Reagent for conversion of carbamates to ureas via isocyanates
Datasheet
Description
Additional Properties Hydrolytic Sensitivity 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required Safety Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Diiodosilane; Silicon diiodide High purity grade for ALD ?Hvap: 33.7 kJ/mol Surface tension, 15 °: 44.1 mN/m Cleaves ethers; converts alcohols to iodides Reagent for conversion of carbamates to ureas via isocyanates
Datasheet

Suppliers

Company
Product
Description
Supplier Links
DIIODOSILANE, 99% - SID3520.1 - Gelest, Inc.
Morrisville, PA, United States
DIIODOSILANE, 99%
SID3520.1
DIIODOSILANE, 99% SID3520.1
Additional Properties Hydrolytic Sensitivity 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required Safety Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Diiodosilane; Silicon diiodide High purity grade for ALD ?Hvap: 33.7 kJ/mol Surface tension, 15 °: 44.1 mN/m Cleaves ethers; converts alcohols to iodides Reagent for conversion of carbamates to ureas via isocyanates

Additional Properties


  • Hydrolytic Sensitivity 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required
    Safety
  • Packaging Under Nitrogen
    ALD Material
    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
    Diiodosilane; Silicon diiodide
  • High purity grade for ALD
  • ?Hvap: 33.7 kJ/mol
  • Surface tension, 15 °: 44.1 mN/m
  • Cleaves ethers; converts alcohols to iodides
  • Reagent for conversion of carbamates to ureas via isocyanates
Supplier's Site Datasheet

Technical Specifications

  Gelest, Inc.
Product Category Organic Chemicals
Product Number SID3520.1
Product Name DIIODOSILANE, 99%
Chemical Formula H 2 I 2 Si
Unlock Full Specs
to access all available technical data

Similar Products

AsahiKlin Precision Cleaning Solvent - AE3100E - AGC Chemicals Americas, Inc.
Specs
Trigger Solvent
Chemical Family All Halogenated; All Ethers; Ethanol
Chemical Name 1,1,2,2- tetra fluoroethyl-2,2,2- trifluoro ethyl ether
View Details
DMI 1,3 Dimethyl-2-Imidazolidinone -  - Mitsui Chemicals America, Inc.
Mitsui Chemicals America, Inc.
Specs
Trigger Solvent
Chemical Name DMI 1,3 Dimethyl-2-Imidazolidinone
State of Matter Liquid / Solution
View Details
DIPHENYLMETHYLETHOXYSILANE - SID4553.0 - Gelest, Inc.
Specs
Chemical Formula C 1 5 H 1 8 OSi
CAS Number 1825-59-8
Boiling Point 212 to 216 F (100 to 102 C)
View Details
Wintersun Chemical
Specs
Chemical Name Calcium Formate
Chemical Formula Ca(HCOO)2
CAS Number 544-17-2
View Details