Mini-Circuits Connectorized SMA-N, High Power Amplifier, 3200 MHz to 3700 MHz, 50Ω RFE-3G33G7100X+

The RFE-3G33G7100X+ is a Class AB, GaN high-power amplifier providing greater than 100 W saturated power over the 3200 to 3700 MHz band, ideal for a variety of high-power test setups as well as applications including communications, radar and more. This ruggedly-designed GaN amplifier provides unconditional stability and built-in self-protection against reverse polarity, over/under voltage, over-temperature, and being overdriven. The amplifier’s output stage is further protected in the event of a fault condition, allowing high-power operation into a full reflection at any phase angle (refer to the maximum input power specifications). Housed in a rugged aluminum alloy case measuring 6.0 x 9.1 x 1.2”, the unit features an input SMA female connector and a Type N female output.