Microchip Technology, Inc. 1200V/Phase leg/SiC Mosfet modules MSCSM120AM042CT6LIAG-Module

Description
SiC Power MOSFET Low RDS(on) High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring (optional) High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Phase leg VDSS (V): 1200 RDSon (mR) typ: 4.2 Current (A) Tc=80C: 394 Silicon type: SiC Mosfet Package: SP6C LI
  • 1200V/Phase leg/SiC Mosfet modules - MSCSM120AM042CT6LIAG-Module - Microchip Technology, Inc.
    Microchip Technology, Inc.
Datasheet
Description
SiC Power MOSFET Low RDS(on) High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring (optional) High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Phase leg VDSS (V): 1200 RDSon (mR) typ: 4.2 Current (A) Tc=80C: 394 Silicon type: SiC Mosfet Package: SP6C LI
Datasheet

Suppliers

Company
Product
Description
Supplier Links
1200V/Phase leg/SiC Mosfet modules - MSCSM120AM042CT6LIAG-Module - Microchip Technology, Inc.
Microchip Technology, Inc.
Chandler, AZ, United States
1200V/Phase leg/SiC Mosfet modules
MSCSM120AM042CT6LIAG-Module
1200V/Phase leg/SiC Mosfet modules MSCSM120AM042CT6LIAG-Module
SiC Power MOSFET Low RDS(on) High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring (optional) High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Phase leg VDSS (V): 1200 RDSon (mR) typ: 4.2 Current (A) Tc=80C: 394 Silicon type: SiC Mosfet Package: SP6C LI
  • SiC Power MOSFET
  • Low RDS(on)
  • High temperature performance
  • Kelvin source for easy drive
  • Low stray inductance
  • Internal thermistor for temperature monitoring (optional)
  • High efficiency converter
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • RoHS Compliant

Additional Features

    • Configuration: Phase leg
    • VDSS (V): 1200
    • RDSon (mR) typ: 4.2
    • Current (A) Tc=80C: 394
    • Silicon type: SiC Mosfet
    • Package: SP6C LI
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Semiconductor Power Modules
Product Number MSCSM120AM042CT6LIAG-Module
Product Name 1200V/Phase leg/SiC Mosfet modules
Technology MOSFET; SiC
Unlock Full Specs
to access all available technical data

Related Documents

Similar Products

IGBT Modules 2-Pack - 6th-Gen V Series Model 2MBI450VN-120S-50 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules 2-Pack
6th-Gen V Series Model 2MBI450VN-120S-50
Specs
Technology IGBT
Package M254
Output Voltage 1200 volts
View Details
- IM393X6E3XKLA1 - Rochester Electronics
Infineon Technologies AG
IM393X6E3XKLA1
Specs
Technology Intelligent Power Module (IPM)
View Details
flow PIM® 1 Power Module - 10-FY07PMA075I7-P587B68 - Vincotech GmbH
Vincotech GmbH
flow PIM® 1 Power Module
10-FY07PMA075I7-P587B68
Specs
Technology IGBT; IGBT7
Configuration PIM (CIB)
Output Voltage 650 volts
View Details
600V Non-Punch-Thru IGBT - IGBT-NPT-600V - Microchip Technology, Inc.
Microchip Technology, Inc.
600V Non-Punch-Thru IGBT
IGBT-NPT-600V
Specs
Technology IGBT
View Details