MOSFETs
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Kelvin source for easy drive
Low stray inductance
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Internal thermistor for temperature monitoring (optional)
Low junction to case thermal resistance
RoHS Compliant
Additional Features
Configuration: Single switch
VDSS (V): 1000
RDSon (mR) typ: 600
Current (A) Tc=80C: 14
Silicon type: MOSFET
Package: SP1
Microchip Technology, Inc.
Done
Description
MOSFETs
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Kelvin source for easy drive
Low stray inductance
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Internal thermistor for temperature monitoring (optional)
Low junction to case thermal resistance
RoHS Compliant
Additional Features
Configuration: Single switch
VDSS (V): 1000
RDSon (mR) typ: 600
Current (A) Tc=80C: 14
Silicon type: MOSFET
Package: SP1
Datasheet
Datasheet Summary Powered by GS/AI
The APTML100U60R020T1AG is a single switch silicon MOSFET module designed for high-voltage applications with a maximum drain-source breakdown voltage of 1000V. It features a low on-resistance of 720 mOc, which is typical at a junction temperature of 25¬8C, and can handle a continuous drain current of 14A at a case temperature of 80¬8C. The module supports pulsed drain currents up to 74A.
This device is suitable for applications such as electronic loads dedicated to power supplies and battery discharge testing. It incorporates an internal thermistor for temperature monitoring and is built on an AlN substrate to enhance thermal performance. The module is designed for direct mounting to heatsinks, facilitating effective heat dissipation.
The APTML100U60R020T1AG is RoHS compliant and offers low stray inductance, making it suitable for high-frequency operations. It also allows for easy series and parallel combinations to improve power and voltage capabilities. The product is sensitive to electrostatic discharge, necessitating proper handling procedures.
Datasheet Summary Powered by GS/AI
The APTML100U60R020T1AG is a single switch silicon MOSFET module designed for high-voltage applications with a maximum drain-source breakdown voltage of 1000V. It features a low on-resistance of 720 mOc, which is typical at a junction temperature of 25¬8C, and can handle a continuous drain current of 14A at a case temperature of 80¬8C. The module supports pulsed drain currents up to 74A.
This device is suitable for applications such as electronic loads dedicated to power supplies and battery discharge testing. It incorporates an internal thermistor for temperature monitoring and is built on an AlN substrate to enhance thermal performance. The module is designed for direct mounting to heatsinks, facilitating effective heat dissipation.
The APTML100U60R020T1AG is RoHS compliant and offers low stray inductance, making it suitable for high-frequency operations. It also allows for easy series and parallel combinations to improve power and voltage capabilities. The product is sensitive to electrostatic discharge, necessitating proper handling procedures.
MOSFETs
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Kelvin source for easy drive
Low stray inductance
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Internal thermistor for temperature monitoring (optional)
Low junction to case thermal resistance
RoHS Compliant
Additional Features
Configuration: Single switch
VDSS (V): 1000
RDSon (mR) typ: 600
Current (A) Tc=80C: 14
Silicon type: MOSFET
Package: SP1
MOSFETs
Low RDSon
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Kelvin source for easy drive
Low stray inductance
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Internal thermistor for temperature monitoring (optional)