Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 52 A
Maximum Drain Source Voltage = 300 V
Maximum Drain Source Resistance = 66 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-247
Mounting Type = Through Hole
Transistor Configuration = Single
Pin Count = 3
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 52 A
Maximum Drain Source Voltage = 300 V
Maximum Drain Source Resistance = 66 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-247
Mounting Type = Through Hole
Transistor Configuration = Single
Pin Count = 3
Delivery on production packaging - Tube. This product is non-returnable.
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 52 A
Maximum Drain Source Voltage = 300 V
Maximum Drain Source Resistance = 66 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-247
Mounting Type = Through Hole
Transistor Configuration = Single
Pin Count = 3
MOSFET, N-CH, 300V, 52A, TO-247 ROHS COMPLIANT: YES
| Littelfuse, Inc. | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH52N30P | 193537 | 71AH4548 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N-Ch, 300V, 52A, To-247 Rohs Compliant Ixys Semiconductor | |
| Polarity | N-Channel | N-Channel | |
| V(BR)DSS | 300 volts | 300 volts | |
| IDSS | 52000 milliamps |
