1200 V Silicon Carbide Schottky diode in TO-247-3 package
The CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Summary of Features
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
Benefits
Highest system efficiency
Improved system efficiency at low switching frequencies
Increased power density at high switching frequencies
Higher system reliability
Reduced EMI
Applications
Motor control and drives
Photovoltaic
Uninterruptible power supplies (UPS)
Designers who used this product also designed with
IKW75N65EH5 | IGBT Discretes
IKW75N65EL5 | IGBT Discretes
IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
1ED020I12-B2 | Gate Driver ICs
IKW75N65ES5 | IGBT Discretes
1EDI60N12AF | Gate Driver ICs
DF160R12W2H3F_B11 | IGBT Modules
BAS3010A-03W | Schottky Diodes
IKW40N120CS6 | IGBT Discretes
1ED020I12-F2 | Gate Driver ICs
FF500R17KE4 | IGBT Modules
BTS3050EJ | HITFET™ +12V | Automotive Low-Side Switch
IKW50N65ES5 | IGBT Discretes
1EDI20N12AF | Gate Driver ICs
BTS5045-1EJA | PROFET™ + 12V | Automotive Smart High-Side Switch
BTS6133D | Classic PROFET™ 12V | Automotive Smart High-Side Switch
IPG20N06S4L-26 | Automotive MOSFET
BAS70-04 | Schottky Diodes
BSS138N | Small Signal/Small Power MOSFET
IRLML2246 | P-Channel Power MOSFET
IKW75N65EH5 | IGBT Discretes
IKW75N65EL5 | IGBT Discretes
IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
1ED020I12-B2 | Gate Driver ICs
IKW75N65ES5 | IGBT Discretes
1EDI60N12AF | Gate Driver ICs
DF160R12W2H3F_B11 | IGBT Modules
BAS3010A-03W | Schottky Diodes
1 2 3 4 5
1200 V Silicon Carbide Schottky diode in TO-247-3 package
The CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Summary of Features
- Best-in-class forward voltage (VF)
- No reverse recovery charge
- Mild positive temperature dependency of VF
- Best-in-class surge current capability
- Excellent thermal performance
Benefits
- Highest system efficiency
- Improved system efficiency at low switching frequencies
- Increased power density at high switching frequencies
- Higher system reliability
- Reduced EMI
Applications
- Motor control and drives
- Photovoltaic
- Uninterruptible power supplies (UPS)
Designers who used this product also designed with
- IKW75N65EH5 |
IGBT Discretes
- IKW75N65EL5 |
IGBT Discretes
- IPW65R019C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 1ED020I12-B2 |
Gate Driver ICs
- IKW75N65ES5 |
IGBT Discretes
- 1EDI60N12AF |
Gate Driver ICs
- DF160R12W2H3F_B11 |
IGBT Modules
- BAS3010A-03W |
Schottky Diodes
- IKW40N120CS6 |
IGBT Discretes
- 1ED020I12-F2 |
Gate Driver ICs
- FF500R17KE4 |
IGBT Modules
- BTS3050EJ |
HITFET™ +12V | Automotive Low-Side Switch
- IKW50N65ES5 |
IGBT Discretes
- 1EDI20N12AF |
Gate Driver ICs
- BTS5045-1EJA |
PROFET™ + 12V | Automotive Smart High-Side Switch
- BTS6133D |
Classic PROFET™ 12V | Automotive Smart High-Side Switch
- IPG20N06S4L-26 |
Automotive MOSFET
- BAS70-04 |
Schottky Diodes
- BSS138N |
Small Signal/Small Power MOSFET
- IRLML2246 |
P-Channel Power MOSFET
- IKW75N65EH5 |
IGBT Discretes
- IKW75N65EL5 |
IGBT Discretes
- IPW65R019C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 1ED020I12-B2 |
Gate Driver ICs
- IKW75N65ES5 |
IGBT Discretes
- 1EDI60N12AF |
Gate Driver ICs
- DF160R12W2H3F_B11 |
IGBT Modules
- BAS3010A-03W |
Schottky Diodes
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