State-of-the-art Quasi Resonance current mode flyback PWM power control IC with startup cell for power ranges up to 300 W. With innovative protection features for superior safety and reliability in operation. Of special note are its frequency modulation, its ultra low standby power consumption and an extensive array of protection features, allowing low EMI and highly efficient, reliable and cost effective designs. With startup cell and implemented with active bust mode and is the best-in-class of standby power performance.
Link to 10W Adapter Reference Design
Summary of Features
500V startup cell for IC self power supply during various states,
digital frequency reduction with decreasing load for higher efficiency
active burst mode operation for ultra-low standby power (<1W @ 0.5W load)
cycle by cylce peak current limitation, maximum output power limitation with input voltage compensation
extensive protection features to protect the IC and the system from various fault conditions e.g. output OVP latch, VCC OVP/UVP, OLP, Output OVP, Short-winding, etc.
Benefits
Higher efficiency
Low EMI noiseL
Low standby power, etc.
Potential Applications
SMPS applications such as LCD/PDP TV, color TV, DVD
Adapters (for reference design 10W Adapter please click here)
Set-Top-Boxes for Satellite and Cable services etc.
Applications
DIN rail power supplies
EV charging
Semiconductor solutions for home entertainment applications
Designers who used this product also designed with
BAT64-05W | Schottky Diodes
BSZ520N15NS3 G | N-Channel Power MOSFET
IPB60R180P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC097N06NS | N-Channel Power MOSFET
IMZ120R060M1H | Silicon Carbide MOSFET Discretes
BSC190N15NS3 G | N-Channel Power MOSFET
BSS123N | Small signal/small power MOSFET
IRFP4668 | N-Channel Power MOSFET
S25FL064LABMFM013 | Quad SPI Flash
IPT012N08N5 | N-Channel Power MOSFET
BSS138N | Small signal/small power MOSFET
BAT64-05W | Schottky Diodes
BSZ520N15NS3 G | N-Channel Power MOSFET
IPB60R180P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC097N06NS | N-Channel Power MOSFET
IMZ120R060M1H | Silicon Carbide MOSFET Discretes
BSC190N15NS3 G | N-Channel Power MOSFET
BSS123N | Small signal/small power MOSFET
IRFP4668 | N-Channel Power MOSFET
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State-of-the-art Quasi Resonance current mode flyback PWM power control IC with startup cell for power ranges up to 300 W. With innovative protection features for superior safety and reliability in operation. Of special note are its frequency modulation, its ultra low standby power consumption and an extensive array of protection features, allowing low EMI and highly efficient, reliable and cost effective designs. With startup cell and implemented with active bust mode and is the best-in-class of standby power performance.
Link to 10W Adapter Reference Design
Summary of Features
- 500V startup cell for IC self power supply during various states,
- digital frequency reduction with decreasing load for higher efficiency
- active burst mode operation for ultra-low standby power (<1W @ 0.5W load)
- cycle by cylce peak current limitation, maximum output power limitation with input voltage compensation
- extensive protection features to protect the IC and the system from various fault conditions e.g. output OVP latch, VCC OVP/UVP, OLP, Output OVP, Short-winding, etc.
Benefits
- Higher efficiency
- Low EMI noiseL
- Low standby power, etc.
Potential Applications
- SMPS applications such as LCD/PDP TV, color TV, DVD
- Adapters (for reference design 10W Adapter please click here)
- Set-Top-Boxes for Satellite and Cable services etc.
Applications
- DIN rail power supplies
- EV charging
- Semiconductor solutions for home entertainment applications
Designers who used this product also designed with
- BAT64-05W |
Schottky Diodes
- BSZ520N15NS3 G |
N-Channel Power MOSFET
- IPB60R180P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC097N06NS |
N-Channel Power MOSFET
- IMZ120R060M1H |
Silicon Carbide MOSFET Discretes
- BSC190N15NS3 G |
N-Channel Power MOSFET
- BSS123N |
Small signal/small power MOSFET
- IRFP4668 |
N-Channel Power MOSFET
- S25FL064LABMFM013 |
Quad SPI Flash
- IPT012N08N5 |
N-Channel Power MOSFET
- BSS138N |
Small signal/small power MOSFET
- BAT64-05W |
Schottky Diodes
- BSZ520N15NS3 G |
N-Channel Power MOSFET
- IPB60R180P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC097N06NS |
N-Channel Power MOSFET
- IMZ120R060M1H |
Silicon Carbide MOSFET Discretes
- BSC190N15NS3 G |
N-Channel Power MOSFET
- BSS123N |
Small signal/small power MOSFET
- IRFP4668 |
N-Channel Power MOSFET
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