Infineon Technologies AG Low Noise RF Transistors BFP410

NPN Silicon RF Transistor for low current applications

Summary of Features

• Low current device suitable e.g. for handhelds
• For high frequency oscillators e.g. DRO for LNB
• For ISM band applications like Automatic Meter Reading, Sensors etc.
• Transit frequency fT = 25 GHz
• Pb-free (RoHS compliant) package

Potential Applications

• Wireless Communications
• For active mixer, amplifier and oscillator applications in RF Front-end

Designers who used this product also designed with

• BAT17-04 |
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• BAR64-04 |
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• BAT60A |
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• BAT15-04R |
  RF Mixer and Detector Schottky Diode
• BAT17-04 |
  RF Mixer and Detector Schottky Diode
• BAR64-04 |
  Antenna Switch
• BAT60A |
  Schottky Diodes
• BAT15-04R |
  RF Mixer and Detector Schottky Diode
• BAT17-04 |
  RF Mixer and Detector Schottky Diode
• BAR64-04 |
  Antenna Switch
• BAT60A |
  Schottky Diodes
• BAT15-04R |
  RF Mixer and Detector Schottky Diode

Manufacturer: Infineon Technologies
Win Source Part Number: 78950-BFP410
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 21.5dB
Frequency - Transition: 25GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-343
Maximum Current Collector: 40mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 5V
Typical Gain (hFE) (Min): 60 @ 13mA, 2V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance