Infineon Technologies AG Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR108 BCR108

Description
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101
  • Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR108 - BCR108 - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote
Description
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

NPN Silicon Digital Transistor with built-in bias resistors (R1=2.2 kΩ, R2=47 kΩ) for switching, inverter, interface, and driver circuits, packaged in SOT23, rated for a collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 200 mW at ambient temperatures up to 102°C, with a junction temperature of 150°C and RoHS-compliant, AEC-Q101 qualified packaging.

Datasheet Summary
Powered by GS/AI

NPN Silicon Digital Transistor with built-in bias resistors (R1=2.2 kΩ, R2=47 kΩ) for switching, inverter, interface, and driver circuits, packaged in SOT23, rated for a collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 200 mW at ambient temperatures up to 102°C, with a junction temperature of 150°C and RoHS-compliant, AEC-Q101 qualified packaging.

Suppliers

Company
Product
Description
Supplier Links
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR108 - BCR108 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR108
BCR108
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR108 BCR108
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101

NPN Silicon Digital Transistor


Summary of Features

  • Switching circuit, inverter, interface circuit, driver circuit
  • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ)
  • BCR108S: Two internally isolated transistors with good matching in one multichip package
  • BCR108S: For orientation in reel see package information below
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BCR108
Product Name Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR108
Polarity NPN (Single); NPN
Package Type SOT23; SOT23
Packing Method Tape Reel; TAPE & REEL
VCEO 50 volts
Unlock Full Specs
to access all available technical data