NPN silicon bipolar junction transistor for general audio frequency applications, available in SOT323 package with dimensions specified for that case. It has a collector-emitter voltage rating of 45 V, collector current capability of 500 mA, and peak collector current of 1000 mA. Power dissipation is rated at 250 mW for SOT323 packages. DC current gain (hFE) ranges from 250 to 630 for the -40 group at 100 mA collector current. Transition frequency is 170 MHz. The device is Pb-free, RoHS compliant, and qualified to AEC-Q101 standard.
Win Source Part Number: 1161239-BC817K40WE63
Category: Discrete Semiconductor Products>Transistors
Series: *
Package: Bulk
Standard Package: 1
Alternative Parts (Cross-Reference): BC817K-40WE6327;
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.21.0075
Mfr: Infineon Technologies
Other Names: 2156-BC817K40WE6327,
RoHS Status: Not applicable
| Win Source Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 1161239-BC817K40WE6327 |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single |
| Package Type | SOT3 |
