Infineon Technologies AG Bipolar Transistors - BJT BC 857A E6327

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Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
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PNP silicon AF transistor for input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. Features a DC current gain grouped as A (125 to 250) at 2 mA collector current and collector-emitter saturation voltage up to 300 mV at 10 mA collector current and 0.5 mA base current. RoHS compliant and not AEC-Q101 qualified.

Datasheet Summary
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PNP silicon AF transistor for input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. Features a DC current gain grouped as A (125 to 250) at 2 mA collector current and collector-emitter saturation voltage up to 300 mV at 10 mA collector current and 0.5 mA base current. RoHS compliant and not AEC-Q101 qualified.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC 857A E6327
Bipolar Transistors - BJT BC 857A E6327
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC 857A E6327
Product Name Bipolar Transistors - BJT
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