Infineon Technologies AG Bipolar Transistors - BJT BC 817K-25 E6327

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Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A
Description
Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A
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NPN silicon bipolar transistor for general audio frequency applications, available in SOT23 or SOT323 packages, with a collector-emitter voltage rating of 45 V, collector current of 500 mA, and power dissipation of 500 mW at ambient temperatures up to 115 °C. It meets AEC-Q101 and RoHS requirements. The DC current gain group for the BC817K-25 variant ranges from 160 to 400 at 100 mA collector current and 1 V collector-emitter voltage.

Datasheet Summary
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NPN silicon bipolar transistor for general audio frequency applications, available in SOT23 or SOT323 packages, with a collector-emitter voltage rating of 45 V, collector current of 500 mA, and power dissipation of 500 mW at ambient temperatures up to 115 °C. It meets AEC-Q101 and RoHS requirements. The DC current gain group for the BC817K-25 variant ranges from 160 to 400 at 100 mA collector current and 1 V collector-emitter voltage.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC 817K-25 E6327
Bipolar Transistors - BJT BC 817K-25 E6327
Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A

Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC 817K-25 E6327
Product Name Bipolar Transistors - BJT
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